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1 Ergebnisse
1
A 6-18-GHz GaN High Power Amplifier with Excellent Gain Fla..:
, In:
2023 International Symposium on Electrical and Electronics Engineering (ISEE)
,
Tran, Nhat
;
Lee, Sanghun
;
Huynh, Cuong
- p. 23-28 , 2023
Link:
https://doi.org/10.1109/ISEE59483.2023.10299882
RT T1
2023 International Symposium on Electrical and Electronics Engineering (ISEE)
: T1
A 6-18-GHz GaN High Power Amplifier with Excellent Gain Flatness
UL https://suche.suub.uni-bremen.de/peid=ieee-10299882&Exemplar=1&LAN=DE A1 Tran, Nhat A1 Lee, Sanghun A1 Huynh, Cuong YR 2023 K1 Silicon carbide K1 Spaceborne radar K1 Microwave communication K1 Microwave circuits K1 Wide band gap semiconductors K1 Radar applications K1 Microwave amplifiers K1 GaN HEMT K1 wideband amplifiers K1 monolithic microwave integrated circuit (MMIC) K1 reactive matching K1 power amplifier (PA) SP 23 OP 28 LK http://dx.doi.org/https://doi.org/10.1109/ISEE59483.2023.10299882 DO https://doi.org/10.1109/ISEE59483.2023.10299882 SF ELIB - SuUB Bremen
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