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1 Ergebnisse
1
Cathodoluminescence study of silicon vacancies color center..:
, In:
2023 International Semiconductor Conference (CAS)
,
Vuillermet, E.
;
Haddadi, R.
;
Bercu, N.
... - p. 135-138 , 2023
Link:
https://doi.org/10.1109/CAS59036.2023.10303651
RT T1
2023 International Semiconductor Conference (CAS)
: T1
Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC
UL https://suche.suub.uni-bremen.de/peid=ieee-10303651&Exemplar=1&LAN=DE A1 Vuillermet, E. A1 Haddadi, R. A1 Bercu, N. A1 Ottaviani, L. A1 Giraudet, L. A1 Lazar, M. YR 2023 SN 2377-0678 K1 Spectroscopy K1 Ion implantation K1 Silicon carbide K1 Raman scattering K1 Lattices K1 Simulated annealing K1 Radiative recombination K1 6H-SiC K1 cathodoluminescence K1 ion implantation K1 silicon vacancies K1 color centers K1 Raman spectroscopy, RBS, SIMS, Monte Carlo simulations SP 135 OP 138 LK http://dx.doi.org/https://doi.org/10.1109/CAS59036.2023.10303651 DO https://doi.org/10.1109/CAS59036.2023.10303651 SF ELIB - SuUB Bremen
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