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1 Ergebnisse
1
RISC-V SoC Physical Implementation in 180 nm CMOS with a Qu..:
, In:
2023 IEEE Seventh Ecuador Technical Chapters Meeting (ECTM)
,
Nascimento, Felipe F.
;
Wuerdig, Rodrigo N.
;
Ponchet, Andre F.
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/ETCM58927.2023.10309011
RT T1
2023 IEEE Seventh Ecuador Technical Chapters Meeting (ECTM)
: T1
RISC-V SoC Physical Implementation in 180 nm CMOS with a Quark Core Based on FemtoRV32
UL https://suche.suub.uni-bremen.de/peid=ieee-10309011&Exemplar=1&LAN=DE A1 Nascimento, Felipe F. A1 Wuerdig, Rodrigo N. A1 Ponchet, Andre F. A1 Sanches, Bruno A1 Loubach, Denis S. A1 D'Amore, Roberto A1 Junior, Marcus H. Victor A1 Oliveira, Walter S. A1 Kuribara, Vitor O. A1 Moreira, Luiz C. YR 2023 K1 Semiconductor device modeling K1 Microprocessors K1 Instruction sets K1 Layout K1 Logic gates K1 CMOS technology K1 Power dissipation K1 SoC K1 RISC-V K1 VLSI K1 CMOS K1 ASIC SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/ETCM58927.2023.10309011 DO https://doi.org/10.1109/ETCM58927.2023.10309011 SF ELIB - SuUB Bremen
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