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AlScN High Electron Mobility Transistors: Integrating High ..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),

Casamento, Joseph ; Nomoto, Kazuki ; Nguyen, Thai-Son... - p. 132-136 , 2023

Link: https://doi.org/10.1109/BCICTS54660.2023.10310921

RT 
T1 <cTitle>2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)</cTitle>: T1 <Title>AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10310921&Exemplar=1&LAN=DE
				
A1 Casamento, Joseph
A1 Nomoto, Kazuki
A1 Nguyen, Thai-Son
A1 Lee, Hyunjea
A1 Savant, Chandrasekhar
A1 Li, Lei
A1 Hickman, Austin
A1 Maeda, Takuya
A1 Shao, Yu-Tsun
A1 Encomendero, Jimy
A1 Gund, Ved
A1 Vasen, Timothy
A1 Afroz, Shamima
A1 Hannan, Daniel
A1 Muller, David A.
A1 Xing, Huili Grace
A1 Jena, Debdeep
YR 2023
SN 2831-4999
K1 Radio frequency
K1 Fabrication
K1 Scandium
K1 HEMTs
K1 Behavioral sciences
K1 Dielectrics
K1 Wide band gap semiconductors
K1 AIN
K1 scandium
K1 GaN
K1 radiofrequency
K1 monolithic microwave integrated circuits
K1 high electron mobility transistor
K1 piezoelectric
K1 high-K dielectric
K1 ferroelectric
SP 132
OP 136
LK http://dx.doi.org/https://doi.org/10.1109/BCICTS54660.2023.10310921
DO https://doi.org/10.1109/BCICTS54660.2023.10310921
SF ELIB - SuUB Bremen

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