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1 Ergebnisse
1
Modeling and Simulation of Discrete Silicon Carbide Integra..:
, In:
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
,
Marbell, Marvin
;
Liu, Yueying
;
Tran, Michelle
... - p. 304-309 , 2023
Link:
https://doi.org/10.1109/BCICTS54660.2023.10311001
RT T1 <cTitle>2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)</cTitle>: T1 <Title>Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF Amplifiers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10311001&Exemplar=1&LAN=DE A1 Marbell, Marvin A1 Liu, Yueying A1 Tran, Michelle A1 Jang, Haedong A1 Hasan, Mehdi A1 Etter, Dan A1 Namishia, Dan A1 Stasiw, Dan A1 Fisher, Jeremy A1 Sheppard, Scott T. A1 Noori, Basim YR 2023 SN 2831-4999 K1 Radio frequency K1 Semiconductor device measurement K1 Power measurement K1 Silicon carbide K1 Prototypes K1 Silicon K1 Data models K1 Integrated passive device K1 pre-match K1 RF power amplifier K1 Silicon Carbide K1 modeling SP 304 OP 309 LK http://dx.doi.org/https://doi.org/10.1109/BCICTS54660.2023.10311001 DO https://doi.org/10.1109/BCICTS54660.2023.10311001 SF ELIB - SuUB Bremen
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