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1 Ergebnisse
1
Theoretical Limit of TiSi2 Contact Resistance : *Note: Sub-..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Jeong, M. Y.
;
Pourghaderi, M. A.
;
Vuttivorakulchai, K.
... - p. 105-108 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319490
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Theoretical Limit of TiSi2 Contact Resistance : *Note: Sub-titles are not captured in Xplore and should not be used</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319490&Exemplar=1&LAN=DE A1 Jeong, M. Y. A1 Pourghaderi, M. A. A1 Vuttivorakulchai, K. A1 Song, S. A1 Kim, Y.-S. A1 Voros, M. A1 Jin, S. A1 Lee, B. A1 Choi, W. A1 Kwon, U. A1 Kim, D. S. YR 2023 K1 Semiconductor device measurement K1 Photonic band gap K1 Silicides K1 Schottky barriers K1 Metals K1 Contact resistance K1 Ions K1 Contact Resistance K1 Schottky Barrier Height K1 Density Functional Theory K1 Silicide SP 105 OP 108 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319490 DO https://doi.org/10.23919/SISPAD57422.2023.10319490 SF ELIB - SuUB Bremen
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