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1 Ergebnisse
1
Quantum Modeling of Semiconductors Leakage Currents Induced..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Jay, A.
;
Mesnard, C.
;
Nicholson, I.
... - p. 141-144 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319491
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Quantum Modeling of Semiconductors Leakage Currents Induced by Defects</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319491&Exemplar=1&LAN=DE A1 Jay, A. A1 Mesnard, C. A1 Nicholson, I. A1 Helleboid, R. A1 Mugny, G. A1 Rideau, D. A1 Goiffon, V. A1 Samos, L. Martin A1 Richard, N. A1 Hemeryck, A. YR 2023 K1 Semiconductor device modeling K1 Analytical models K1 Computational modeling K1 Wave functions K1 Semiconductor process modeling K1 Numerical models K1 Leakage currents K1 Dark current K1 electronic cross section K1 multiphonon processes K1 deep center K1 semiconductors K1 ionic wave functions SP 141 OP 144 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319491 DO https://doi.org/10.23919/SISPAD57422.2023.10319491 SF ELIB - SuUB Bremen
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