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1 Ergebnisse
1
How the Flat Field Transistor (FFT) can enable the continua..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Adamu-Lema, F.
;
Dutta, T.
;
Bensouiah, D.
.. - p. 221-224 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319510
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>How the Flat Field Transistor (FFT) can enable the continuation of DRAM scaling</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319510&Exemplar=1&LAN=DE A1 Adamu-Lema, F. A1 Dutta, T. A1 Bensouiah, D. A1 Duan, M. A1 Asenov, A. YR 2023 K1 Performance evaluation K1 MOSFET K1 Circuit optimization K1 Random access memory K1 CMOS technology K1 Transistors K1 Integrated circuit reliability K1 Performance K1 DRAM K1 variability K1 noise K1 sense amplifier K1 leakage current K1 Sense Amplifier SP 221 OP 224 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319510 DO https://doi.org/10.23919/SISPAD57422.2023.10319510 SF ELIB - SuUB Bremen
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