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Performance comparison of capping layer materials for doubl..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Aboud, Shela
;
Schneider, Julian
;
Luy, Jan-Niclas
. - p. 353-356 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319512
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Performance comparison of capping layer materials for double spin-torque magnetic tunnel junctions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319512&Exemplar=1&LAN=DE A1 Aboud, Shela A1 Schneider, Julian A1 Luy, Jan-Niclas A1 Markussen, Troels YR 2023 K1 Performance evaluation K1 Damping K1 Tantalum K1 Atomic layer deposition K1 Tungsten K1 Switches K1 Writing K1 STT-MRAM K1 spin transfer torque K1 TMR K1 DFT K1 Machine-learned force fields K1 atomistic spin dynamics SP 353 OP 356 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319512 DO https://doi.org/10.23919/SISPAD57422.2023.10319512 SF ELIB - SuUB Bremen
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