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1 Ergebnisse
1
Body resistance model for Partially Depleted SOI device: ch..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Martinie, Sebastien
;
Vaysset, Adrien
;
Mourrier, Yannick
.. - p. 129-132 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319516
RT T1
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Body resistance model for Partially Depleted SOI device: charge-based approach, extraction and Verilog-A implementation
UL https://suche.suub.uni-bremen.de/peid=ieee-10319516&Exemplar=1&LAN=DE A1 Martinie, Sebastien A1 Vaysset, Adrien A1 Mourrier, Yannick A1 Scheer, Patrick A1 Rozeau, Olivier YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Three-dimensional displays K1 Silicon-on-insulator K1 Semiconductor process modeling K1 Transistors K1 Hardware design languages K1 Body resistance K1 PDSOI K1 PSP K1 compact model K1 SPICE K1 Verilog-A SP 129 OP 132 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319516 DO https://doi.org/10.23919/SISPAD57422.2023.10319516 SF ELIB - SuUB Bremen
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