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1 Ergebnisse
1
3D Simulation Method to Predict Breakdown Voltage of Comple..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Lee, Jieun
;
Kim, Jong Min
;
Pyun, Myeong Bum
... - p. 257-260 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319528
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>3D Simulation Method to Predict Breakdown Voltage of Complex Large-Scale Ring Corner in SJ MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319528&Exemplar=1&LAN=DE A1 Lee, Jieun A1 Kim, Jong Min A1 Pyun, Myeong Bum A1 Cho, Won Kook A1 Ko, Kwang Young A1 Nah, Hyunchul YR 2023 K1 Semiconductor device modeling K1 Structural rings K1 MOSFET K1 Solid modeling K1 Three-dimensional displays K1 Graphical models K1 Predictive models K1 3D TCAD Simulation K1 Super Junction MOSFET K1 Power Devices K1 Edge Termination K1 Ring Corner SP 257 OP 260 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319528 DO https://doi.org/10.23919/SISPAD57422.2023.10319528 SF ELIB - SuUB Bremen
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