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1 Ergebnisse
1
Electronic Transparency Limit of hBN Separation Layer for Q..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Kim, Tae Hyung
;
Lee, Juho
;
Kim, Yong-Hoon
- p. 41-44 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319533
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Electronic Transparency Limit of hBN Separation Layer for Quantum-Hybridization Negative Differential Resistance in Vertical Graphene/hBN/Graphene Heterojunctions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319533&Exemplar=1&LAN=DE A1 Kim, Tae Hyung A1 Lee, Juho A1 Kim, Yong-Hoon YR 2023 K1 Resistance K1 Performance evaluation K1 Electrodes K1 Two dimensional displays K1 Graphene K1 Quantum mechanics K1 Voltage K1 graphene K1 hBN K1 quantum hybridization K1 negative differential resistance K1 nonequilibrium first-principles calculations SP 41 OP 44 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319533 DO https://doi.org/10.23919/SISPAD57422.2023.10319533 SF ELIB - SuUB Bremen
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