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1 Ergebnisse
1
SOI pMOS drain leakage understanding based on TCAD and meas..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Bosch, D.
;
Lheritier, P.
;
Guyader, F.
... - p. 65-68 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319543
RT T1
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
SOI pMOS drain leakage understanding based on TCAD and measurements
UL https://suche.suub.uni-bremen.de/peid=ieee-10319543&Exemplar=1&LAN=DE A1 Bosch, D. A1 Lheritier, P. A1 Guyader, F. A1 Joblot, S. A1 Ponthenier, F. A1 Lacord, J. YR 2023 K1 Semiconductor device measurement K1 Current measurement K1 Silicon-on-insulator K1 Radiative recombination K1 Tunneling K1 Data models K1 Semiconductor process modeling K1 SOI K1 Leakage K1 TCAD simulation K1 Schenk Band-to-Band tunneling K1 SRH K1 GIDL SP 65 OP 68 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319543 DO https://doi.org/10.23919/SISPAD57422.2023.10319543 SF ELIB - SuUB Bremen
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