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Molecular dynamics study of Al implantation in 4H-SiC:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Leroch, Sabine
;
Stella, Robert
;
Hossinger, Andreas
. - p. 185-188 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319554
RT T1
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Molecular dynamics study of Al implantation in 4H-SiC
UL https://suche.suub.uni-bremen.de/peid=ieee-10319554&Exemplar=1&LAN=DE A1 Leroch, Sabine A1 Stella, Robert A1 Hossinger, Andreas A1 Filipovic, Lado YR 2023 K1 Fabrication K1 Temperature dependence K1 Annealing K1 Correlation K1 Silicon carbide K1 Lattices K1 4H-SiC K1 Gao-Weber potential K1 Al-implantation K1 formation energies of Al in SiC K1 high-temperature implantation SP 185 OP 188 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319554 DO https://doi.org/10.23919/SISPAD57422.2023.10319554 SF ELIB - SuUB Bremen
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