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Improving the tight-binding description of spin-orbit inter..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Veste, Gaetan
;
Rodriguez-Mena, Esteban A.
;
Martinez, Biel
... - p. 345-348 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319558
RT T1
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Improving the tight-binding description of spin-orbit interaction in a Si/Ge heterostructure for qubits applications
UL https://suche.suub.uni-bremen.de/peid=ieee-10319558&Exemplar=1&LAN=DE A1 Veste, Gaetan A1 Rodriguez-Mena, Esteban A. A1 Martinez, Biel A1 Sklenard, Benoit A1 Li, Jing A1 Niquet, Yann-Michel YR 2023 K1 Computational modeling K1 Qubit K1 Refining K1 Potential well K1 Germanium K1 Semiconductor process modeling K1 Numerical models K1 Si/Ge heterostructure K1 spin-orbit coupling K1 Tight Binding K1 DFT K1 Spin Qubits SP 345 OP 348 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319558 DO https://doi.org/10.23919/SISPAD57422.2023.10319558 SF ELIB - SuUB Bremen
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