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1
First-principles study of the conduction mechanism in tanta..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Lee, Juho
;
Kim, Seunghyun
;
Kim, Hyoseok
... - p. 197-200 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319564
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>First-principles study of the conduction mechanism in tantala-based resistive memory devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319564&Exemplar=1&LAN=DE A1 Lee, Juho A1 Kim, Seunghyun A1 Kim, Hyoseok A1 Hong, Sungduk A1 Kim, Sung Jin A1 Sin Kim, Dae A1 Woo, Myung Hun A1 Heon Kang, Joo A1 Park, Hyun-Mog A1 Ha, Daewon YR 2023 K1 Resistance K1 Nonvolatile memory K1 Microscopy K1 Schottky barriers K1 Modulation K1 Switches K1 Voltage K1 ReRAM K1 tantala K1 density functional theory K1 conducting filament SP 197 OP 200 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319564 DO https://doi.org/10.23919/SISPAD57422.2023.10319564 SF ELIB - SuUB Bremen
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