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1
TCAD Modeling of Germanium Behavior During Forming Operatio..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Baldo, M.
;
Laurin, L.
;
Petroni, E.
... - p. 321-324 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319603
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319603&Exemplar=1&LAN=DE A1 Baldo, M. A1 Laurin, L. A1 Petroni, E. A1 Pavesi, C. A1 Motta, A. A1 Ielmini, D. A1 Annunziata, R. A1 Redaelli, A. YR 2023 K1 Phase change materials K1 Fabrication K1 Semiconductor device modeling K1 Solid modeling K1 Temperature distribution K1 Germanium K1 Semiconductor process modeling K1 ePCM K1 Forming K1 Ge-GST K1 TCAD SP 321 OP 324 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319603 DO https://doi.org/10.23919/SISPAD57422.2023.10319603 SF ELIB - SuUB Bremen
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