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Understanding the impact of polysilicon percolative conduct..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Amoroso, Salvatore Maria
;
Malavena, Gerardo
;
Brown, Andrew R.
... - p. 97-100 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319604
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Understanding the impact of polysilicon percolative conduction on 3D NAND variability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319604&Exemplar=1&LAN=DE A1 Amoroso, Salvatore Maria A1 Malavena, Gerardo A1 Brown, Andrew R. A1 Asenov, Plamen A1 Lin, Xi-Wei A1 Moroz, Victor A1 Giulianini, Mattia A1 Refaldi, David Gianluigi A1 Compagnoni, Christian Monzio A1 Spinelli, Alessandro Sottocornola YR 2023 K1 Grain boundaries K1 Solid modeling K1 Analytical models K1 Three-dimensional displays K1 Fluctuations K1 Stochastic processes K1 Predictive models K1 3D NAND K1 Memories K1 TCAD K1 Variability K1 Reliability K1 Random Telegraph Noise SP 97 OP 100 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319604 DO https://doi.org/10.23919/SISPAD57422.2023.10319604 SF ELIB - SuUB Bremen
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