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1 Ergebnisse
1
Modeling Degradation and Breakdown in SiO2 and High-k Gate ..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Padovani, Andrea
;
Torraca, Paolo La
;
Larcher, Luca
.. - p. 93-96 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319608
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319608&Exemplar=1&LAN=DE A1 Padovani, Andrea A1 Torraca, Paolo La A1 Larcher, Luca A1 Strand, Jack A1 Shluger, Alexander YR 2023 K1 Degradation K1 Silicon compounds K1 Breakdown voltage K1 Solid modeling K1 Three-dimensional displays K1 Logic gates K1 Dielectrics K1 Dielectric degradation K1 dielectric breakdown K1 TDDB K1 Ginestra® K1 stress-induced leakage currents (SILC) SP 93 OP 96 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319608 DO https://doi.org/10.23919/SISPAD57422.2023.10319608 SF ELIB - SuUB Bremen
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