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1 Ergebnisse
1
Full-Band Quantum Simulations of Semiconductor Devices base..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Pilotto, Alessandro
;
M'Foukh, Adel
;
Dollfus, Philippe
.. - p. 301-304 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319610
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319610&Exemplar=1&LAN=DE A1 Pilotto, Alessandro A1 M'Foukh, Adel A1 Dollfus, Philippe A1 Saint-Martin, Jeriome A1 Pala, Marco G. YR 2023 K1 Scattering K1 Radiative recombination K1 Phonons K1 Tunneling K1 Predictive models K1 Silicon K1 Semiconductor process modeling K1 NEGF K1 Empirical Pseudopotential Method K1 Shockley-Read-Hall Recombination K1 Electron-Phonon Interaction SP 301 OP 304 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319610 DO https://doi.org/10.23919/SISPAD57422.2023.10319610 SF ELIB - SuUB Bremen
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