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An Accurate k*p Approximation of the Empirical Pseudopotent..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Renner, Max
;
Linn, Tobias
;
Jungemann, Christoph
- p. 269-272 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319613
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>An Accurate k*p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319613&Exemplar=1&LAN=DE A1 Renner, Max A1 Linn, Tobias A1 Jungemann, Christoph YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Electric potential K1 Logic gates K1 Silicon K1 Mathematical models K1 Eigenvalues and eigenfunctions K1 MOS devices K1 semiconductor device modeling K1 schrodinger equation SP 269 OP 272 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319613 DO https://doi.org/10.23919/SISPAD57422.2023.10319613 SF ELIB - SuUB Bremen
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