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1 Ergebnisse
1
A Compact Model of FTJ Covering the Trapping/De-trapping Ch..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Feng, Ning
;
Ji, Ning
;
Zhang, Fangxing
... - p. 121-124 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319617
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319617&Exemplar=1&LAN=DE A1 Feng, Ning A1 Ji, Ning A1 Zhang, Fangxing A1 Li, Yu A1 Cai, Puyang A1 Li, Hao A1 Zhang, Lining A1 Wang, Runsheng A1 Huang, Ru YR 2023 K1 Semiconductor device modeling K1 Analytical models K1 Voltage K1 Tunneling K1 Numerical simulation K1 Silicon K1 Semiconductor process modeling K1 TCAD K1 Trapping/De-trapping K1 self-consistent K1 dynamic Compact model K1 Ferroelectric tunnel junction SP 121 OP 124 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319617 DO https://doi.org/10.23919/SISPAD57422.2023.10319617 SF ELIB - SuUB Bremen
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