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1 Ergebnisse
1
Machine Learning-augmented High-efficient TCAD on Accurate ..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Xu, Haoqing
;
Zhan, Guohui
;
Li, Shixin
... - p. 273-276 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319623
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319623&Exemplar=1&LAN=DE A1 Xu, Haoqing A1 Zhan, Guohui A1 Li, Shixin A1 Wu, Jiahao A1 Luo, Kun A1 Liu, Yu A1 He, Chao A1 Wu, Zhenhua YR 2023 K1 Semiconductor device modeling K1 Adaptation models K1 Quantum computing K1 Computational modeling K1 Gallium arsenide K1 Potential well K1 Logic gates K1 Gate-all-around Transistor K1 Machine Learning K1 Quantum Effect SP 273 OP 276 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319623 DO https://doi.org/10.23919/SISPAD57422.2023.10319623 SF ELIB - SuUB Bremen
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