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Statistical Modeling of Metal-Oxide RRAM SET/RESET Behavior..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Wattal, Aarav
;
Levy, Akash
;
Khan, Zainab Faryal
- p. 173-176 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319632
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Statistical Modeling of Metal-Oxide RRAM SET/RESET Behavior Using Deep Neural Networks</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319632&Exemplar=1&LAN=DE A1 Wattal, Aarav A1 Levy, Akash A1 Khan, Zainab Faryal YR 2023 K1 Semiconductor device measurement K1 Visualization K1 Resistive RAM K1 Artificial neural networks K1 Predictive models K1 Probability distribution K1 Data models K1 resistive RAM (RRAM) K1 non-volatile memory K1 deep neural network K1 statistical device modeling SP 173 OP 176 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319632 DO https://doi.org/10.23919/SISPAD57422.2023.10319632 SF ELIB - SuUB Bremen
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