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1 Ergebnisse
1
Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox ..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Hirchaou, Y.
;
Goes, W.
;
Hylin, C.
... - p. 333-336 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319635
RT T1
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects
UL https://suche.suub.uni-bremen.de/peid=ieee-10319635&Exemplar=1&LAN=DE A1 Hirchaou, Y. A1 Goes, W. A1 Hylin, C. A1 Blaise, P. A1 Li, J. A1 Triozon, F. YR 2023 K1 Semiconductor device modeling K1 Thermal resistance K1 Simulation K1 Resistive RAM K1 Switches K1 Redox K1 Thermal management K1 OxRAM K1 TCAD K1 HfO2 K1 Redox Reactions K1 Thermal Effects SP 333 OP 336 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319635 DO https://doi.org/10.23919/SISPAD57422.2023.10319635 SF ELIB - SuUB Bremen
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