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1
Effect of Metal Coupling on Schottky Barrier Height Extract..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Su, Sheng-Kai
;
Chen, Edward
;
Sanchez-Soares, Alfonso
... - p. 109-112 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319637
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Effect of Metal Coupling on Schottky Barrier Height Extraction</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319637&Exemplar=1&LAN=DE A1 Su, Sheng-Kai A1 Chen, Edward A1 Sanchez-Soares, Alfonso A1 Kelly, Thomas A1 Fagas, Giorgos A1 Greer, James C. A1 Pitner, Gregory A1 Wong, H.-S. Philip A1 Radu, Iuliana P. YR 2023 K1 Couplings K1 Temperature measurement K1 Semiconductor device measurement K1 Fermi level K1 Contacts K1 Schottky barriers K1 Metals K1 Low dimensional material K1 Contact resistance K1 Schottky barrier extraction K1 metal coupling K1 NEGF SP 109 OP 112 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319637 DO https://doi.org/10.23919/SISPAD57422.2023.10319637 SF ELIB - SuUB Bremen
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