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Description of Gate-to-Channel Tunneling Leakage Mechanism ..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Medina-Bailon, Cristina
;
Rodriguez, Gerardo
;
Padilla, Jose Luis
... - p. 309-312 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319641
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319641&Exemplar=1&LAN=DE A1 Medina-Bailon, Cristina A1 Rodriguez, Gerardo A1 Padilla, Jose Luis A1 Donetti, Luca A1 Navarro, Carlos A1 Sampedro, Carlos A1 Gamiz, Francisco YR 2023 K1 Performance evaluation K1 Monte Carlo methods K1 Silicon-on-insulator K1 Logic gates K1 Insulators K1 FinFETs K1 Nanoscale devices K1 gate leakage mechanism K1 direct oxide tunneling K1 trap assisted tunneling K1 MS-EMC K1 FDSOI K1 FinFET SP 309 OP 312 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319641 DO https://doi.org/10.23919/SISPAD57422.2023.10319641 SF ELIB - SuUB Bremen
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