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1 Ergebnisse
1
Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) ..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Thesberg, M.
;
Schanovsky, F.
;
Stanojevic, Z.
.. - p. 117-120 , 2023
Link:
https://doi.org/10.23919/SISPAD57422.2023.10319645
RT T1 <cTitle>2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For The Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10319645&Exemplar=1&LAN=DE A1 Thesberg, M. A1 Schanovsky, F. A1 Stanojevic, Z. A1 Baumgartner, O. A1 Karner, M. YR 2023 K1 Semiconductor device modeling K1 Solid modeling K1 Three-dimensional displays K1 Computational modeling K1 Semiconductor process modeling K1 Behavioral sciences K1 Transistors K1 ferroelectricity K1 ferroelectric transistors K1 Fe-FETs K1 TCAD K1 3D modeling K1 steep-slope devices K1 percolation physics SP 117 OP 120 LK http://dx.doi.org/https://doi.org/10.23919/SISPAD57422.2023.10319645 DO https://doi.org/10.23919/SISPAD57422.2023.10319645 SF ELIB - SuUB Bremen
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