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1 Ergebnisse
1
Gate Oxide Induced Reliability Assessment of Junctionless F..:
, In:
2023 IEEE SENSORS
,
Gandhi, Navneet
;
Jaisawal, Rajeewa Kumar
;
Rathore, Sunil
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/SENSORS56945.2023.10324885
RT T1
2023 IEEE SENSORS
: T1
Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor
UL https://suche.suub.uni-bremen.de/peid=ieee-10324885&Exemplar=1&LAN=DE A1 Gandhi, Navneet A1 Jaisawal, Rajeewa Kumar A1 Rathore, Sunil A1 Kondekar, P. N. A1 Dixit, Ankit A1 Kumar, Navneen A1 Georgiev, Vihar A1 Bagga, Navjeet YR 2023 SN 2168-9229 K1 Performance evaluation K1 Sensitivity K1 Hydrogen K1 Semiconductor device reliability K1 Logic gates K1 Tunneling K1 Reliability engineering K1 GIDL K1 Adsorption K1 BTBT K1 DIBL K1 Parasitic bipolar transistor K1 Pressure K1 Temperature SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SENSORS56945.2023.10324885 DO https://doi.org/10.1109/SENSORS56945.2023.10324885 SF ELIB - SuUB Bremen
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