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1 Ergebnisse
1
Single-Body-Integrated Complementary Tunneling Field-Effect..:
, In:
2023 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)
,
Kim, Soomin
;
Oh, Seeun
;
Ansari, Md. Hasan Raza
.. - p. 1-2 , 2023
Link:
https://doi.org/10.1109/ICCE-Asia59966.2023.10326399
RT T1 <cTitle>2023 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)</cTitle>: T1 <Title>Single-Body-Integrated Complementary Tunneling Field-Effect Transistor (SBI CTFET) and Design Consideration of Processing Margin in Dual-Gate Formation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10326399&Exemplar=1&LAN=DE A1 Kim, Soomin A1 Oh, Seeun A1 Ansari, Md. Hasan Raza A1 El-Atab, Nazek A1 Cho, Seongjae YR 2023 K1 Performance evaluation K1 TFETs K1 Tunneling K1 Logic gates K1 CMOS technology K1 Transistors K1 Integrated circuit reliability K1 single-body-integration K1 complementary tunneling field-effect transistor K1 enhancement mode K1 reliable operation K1 area scaling K1 processing margin SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/ICCE-Asia59966.2023.10326399 DO https://doi.org/10.1109/ICCE-Asia59966.2023.10326399 SF ELIB - SuUB Bremen
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