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1 Ergebnisse
1
First Demonstration of BEOL-compatible Amorphous InGaZnOx C..:
, In:
2023 International Conference on IC Design and Technology (ICICDT)
,
Zheng, Zijie
;
Xie, Jiawei
;
Sun, Yiyuan
... - p. 29-33 , 2023
Link:
https://doi.org/10.1109/ICICDT59917.2023.10332300
RT T1 <cTitle>2023 International Conference on IC Design and Technology (ICICDT)</cTitle>: T1 <Title>First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10332300&Exemplar=1&LAN=DE A1 Zheng, Zijie A1 Xie, Jiawei A1 Sun, Yiyuan A1 Xu, Ying A1 Wang, Xiaolin A1 Jiao, Leming A1 Zhou, Zuopu A1 Kong, Qiwen A1 Chen, Yue A1 Gong, Xiao YR 2023 SN 2691-0462 K1 Performance evaluation K1 Integrated circuits K1 Low voltage K1 Nonvolatile memory K1 Reliability K1 Optimization K1 floating gate memory (FGM) K1 amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) K1 antiferroelectric (AFe) K1 metal-ferroelectric-metal-insulator-semiconductor (MFMIS) K1 charge trapping K1 load line analysis SP 29 OP 33 LK http://dx.doi.org/https://doi.org/10.1109/ICICDT59917.2023.10332300 DO https://doi.org/10.1109/ICICDT59917.2023.10332300 SF ELIB - SuUB Bremen
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