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1 Ergebnisse
1
Schottky Barrier Diode Based on Ge-Doped $\alpha-\text{Ga}_..:
, In:
2023 IEEE CPMT Symposium Japan (ICSJ)
,
Wakamatsu, Takeru
;
Isobe, Yuki
;
Takane, Hitoshi
.. - p. 192-195 , 2023
Link:
https://doi.org/10.1109/ICSJ59341.2023.10339549
RT T1
2023 IEEE CPMT Symposium Japan (ICSJ)
: T1
Schottky Barrier Diode Based on Ge-Doped $\alpha-\text{Ga}_{2}\mathrm{O}_{3}$ Films Grown by Mist-CVD Method
UL https://suche.suub.uni-bremen.de/peid=ieee-10339549&Exemplar=1&LAN=DE A1 Wakamatsu, Takeru A1 Isobe, Yuki A1 Takane, Hitoshi A1 Kaneko, Kentaro A1 Tanaka, Katsuhisa YR 2023 SN 2475-8418 K1 Electrodes K1 Resistance K1 Performance evaluation K1 Schottky diodes K1 Annealing K1 Photonic band gap K1 Films K1 $\alpha-\text{Ga}_{2}\mathrm{O}_{3}$ K1 ultra-wide bandgap semiconductor K1 power electronics K1 Schottky barrier diode SP 192 OP 195 LK http://dx.doi.org/https://doi.org/10.1109/ICSJ59341.2023.10339549 DO https://doi.org/10.1109/ICSJ59341.2023.10339549 SF ELIB - SuUB Bremen
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