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1 Ergebnisse
1
Influence of Anti-parallel Diode Characteristics on Gate Dr..:
, In:
2023 26th International Conference on Electrical Machines and Systems (ICEMS)
,
Ma, Mingcheng
;
Sun, Tianlin
;
Ren, Jiale
.. - p. 4523-4526 , 2023
Link:
https://doi.org/10.1109/ICEMS59686.2023.10344400
RT T1 <cTitle>2023 26th International Conference on Electrical Machines and Systems (ICEMS)</cTitle>: T1 <Title>Influence of Anti-parallel Diode Characteristics on Gate Drive during IGBT Turn-on Transient</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10344400&Exemplar=1&LAN=DE A1 Ma, Mingcheng A1 Sun, Tianlin A1 Ren, Jiale A1 Hao, Yuanchao A1 Xu, Dianguo YR 2023 SN 2642-5513 K1 Insulated gate bipolar transistors K1 Employee welfare K1 Uncertainty K1 Logic gates K1 Drives K1 Semiconductor diodes K1 Topology K1 IGBT K1 anti-parallel diodes K1 gate drive strategy K1 reverse recovery process SP 4523 OP 4526 LK http://dx.doi.org/https://doi.org/10.1109/ICEMS59686.2023.10344400 DO https://doi.org/10.1109/ICEMS59686.2023.10344400 SF ELIB - SuUB Bremen
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