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1 Ergebnisse
1
Modeling of Conducted EMI Emissions in 10 kV SiC MOSFET Bas..:
, In:
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Barzkar, Ashkan
;
Fan, Boran
;
Song, He
... - p. 2967-2974 , 2023
Link:
https://doi.org/10.1109/ECCE53617.2023.10362033
RT T1 <cTitle>2023 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Modeling of Conducted EMI Emissions in 10 kV SiC MOSFET Based Power Electronics Building Blocks</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10362033&Exemplar=1&LAN=DE A1 Barzkar, Ashkan A1 Fan, Boran A1 Song, He A1 Stewart, Joshua A1 Burgos, Rolando A1 Dong, Dong A1 Boroyevich, Dushan YR 2023 SN 2329-3748 K1 Semiconductor device modeling K1 MOSFET K1 Silicon carbide K1 Electromagnetic interference K1 Predictive models K1 Power electronics K1 Finite element analysis K1 Common mode (CM) current K1 electromagnetic interference (EMI) K1 high-frequency lumped model K1 medium voltage (MV) power converter K1 power electronics building block (PEBB) K1 10 kV SiC MOSFET SP 2967 OP 2974 LK http://dx.doi.org/https://doi.org/10.1109/ECCE53617.2023.10362033 DO https://doi.org/10.1109/ECCE53617.2023.10362033 SF ELIB - SuUB Bremen
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