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1 Ergebnisse
1
Gate Driver Design and Device Characterization for 3.3 kV S..:
, In:
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Gutierrez, Bryan
;
Hou, Zhengming
;
Jiao, Dong
... - p. 5983-5987 , 2023
Link:
https://doi.org/10.1109/ECCE53617.2023.10362206
RT T1 <cTitle>2023 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Gate Driver Design and Device Characterization for 3.3 kV SiC MOSFET Modules</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10362206&Exemplar=1&LAN=DE A1 Gutierrez, Bryan A1 Hou, Zhengming A1 Jiao, Dong A1 Hsieh, Hsin-Che A1 Chen, XingRou A1 Liao, Hsuan A1 Lai, Jih-Sheng A1 Yu, Ming-Hung A1 Chen, Kuan-Wen YR 2023 SN 2329-3748 K1 Performance evaluation K1 Inductance K1 MOSFET K1 Energy loss K1 Transducers K1 Silicon carbide K1 Current measurement K1 double pulse test (DPT) K1 gate driver K1 medium voltage K1 silicon carbide (SiC) SP 5983 OP 5987 LK http://dx.doi.org/https://doi.org/10.1109/ECCE53617.2023.10362206 DO https://doi.org/10.1109/ECCE53617.2023.10362206 SF ELIB - SuUB Bremen
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