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1 Ergebnisse
1
Investigation on Dynamic Degradation of SiC MOSFETs after T..:
, In:
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Liang, Shiwei
;
Wang, Jun
;
Shu, Lei
... - p. 5757-5762 , 2023
Link:
https://doi.org/10.1109/ECCE53617.2023.10362271
RT T1 <cTitle>2023 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Investigation on Dynamic Degradation of SiC MOSFETs after Total Ionizing Dose Radiation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10362271&Exemplar=1&LAN=DE A1 Liang, Shiwei A1 Wang, Jun A1 Shu, Lei A1 Yang, Yu A1 Wu, Ziyuan A1 Li, Tongde A1 Wang, Liang A1 Deng, Gaoqiang A1 Fan, Fan A1 Wang, Chengjie YR 2023 SN 2329-3748 K1 Degradation K1 MOSFET K1 Silicon carbide K1 Switches K1 Logic gates K1 Aerodynamics K1 Capacitance K1 Radiation K1 Total ionizing dose (TID) K1 SiC MOSFETs K1 Switching characteristics SP 5757 OP 5762 LK http://dx.doi.org/https://doi.org/10.1109/ECCE53617.2023.10362271 DO https://doi.org/10.1109/ECCE53617.2023.10362271 SF ELIB - SuUB Bremen
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