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1 Ergebnisse
1
Design of a High Efficiency and High Power-Density GaN-Base..:
, In:
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Xu, Wenzhe
;
Zhu, Shuangxi
;
Hu, Zhiyi
... - p. 2625-2630 , 2023
Link:
https://doi.org/10.1109/ECCE53617.2023.10362281
RT T1 <cTitle>2023 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Design of a High Efficiency and High Power-Density GaN-Based Microinverter</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10362281&Exemplar=1&LAN=DE A1 Xu, Wenzhe A1 Zhu, Shuangxi A1 Hu, Zhiyi A1 Liu, Teng A1 Du, Mengyao A1 Wen, Jin A1 Chen, Cai A1 Kang, Yong A1 Chen, Haiyan A1 Jin, Zhaosheng A1 Yang, Lei YR 2023 SN 2329-3748 K1 Photovoltaic systems K1 Power system measurements K1 Prototypes K1 Voltage K1 Energy conversion K1 HEMTs K1 MODFETs K1 Microinverter K1 high power-density K1 GaN High Electron Mobility Transistor (HEMT) K1 zero voltage switching (ZVS) K1 Power Decoupling SP 2625 OP 2630 LK http://dx.doi.org/https://doi.org/10.1109/ECCE53617.2023.10362281 DO https://doi.org/10.1109/ECCE53617.2023.10362281 SF ELIB - SuUB Bremen
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