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1
Practical Insulation Testing of 10 kV SiC MOSFET Modules:
, In:
2023 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Stewart, Joshua
;
Nam, David
;
Mendes, Arthur
... - p. 5517-5524 , 2023
Link:
https://doi.org/10.1109/ECCE53617.2023.10362828
RT T1 <cTitle>2023 IEEE Energy Conversion Congress and Exposition (ECCE)</cTitle>: T1 <Title>Practical Insulation Testing of 10 kV SiC MOSFET Modules</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10362828&Exemplar=1&LAN=DE A1 Stewart, Joshua A1 Nam, David A1 Mendes, Arthur A1 Lin, Xiang A1 Dong, Dong A1 Burgos, Rolando YR 2023 SN 2329-3748 K1 Partial discharges K1 Insulation K1 Voltage measurement K1 Silicon carbide K1 Multichip modules K1 Pulse width modulation K1 Threshold voltage K1 power module packaging K1 silicon carbide (SiC) K1 partial discharge K1 dwell time SP 5517 OP 5524 LK http://dx.doi.org/https://doi.org/10.1109/ECCE53617.2023.10362828 DO https://doi.org/10.1109/ECCE53617.2023.10362828 SF ELIB - SuUB Bremen
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