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High-Temperature Electronics Using $\beta{-}$ Ga203 FETs an..:

, In: NAECON 2023 - IEEE National Aerospace and Electronics Conference,

Islam, Ahmad E. ; Grupen, Matt ; Hughes, Gary... - p. 263-268 , 2023

Link: https://doi.org/10.1109/NAECON58068.2023.10365790

RT 
T1 <cTitle>NAECON 2023 - IEEE National Aerospace and Electronics Conference</cTitle>: T1 <Title>High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10365790&Exemplar=1&LAN=DE
				
A1 Islam, Ahmad E.
A1 Grupen, Matt
A1 Hughes, Gary
A1 Popp, Andreas
A1 Sepelak, Nicholas P.
A1 Leedy, Kevin D.
A1 Asel, Thaddeus
A1 Zhu, Wenjuan
A1 Miesle, Adam T.
A1 Liddy, Kyle J.
A1 Neal, Adam
A1 Poling, Brian
A1 Lee, Hanwool
A1 Dryden, Daniel M.
A1 Mou, Shin
A1 Chabak, Kelson
A1 Walker, Dennis E.
A1 Crespo, Antonio
A1 Heller, Eric
A1 Green, Andrew J.
A1 Sepelak, Nicholas P.
YR 2023
SN 2379-2027
K1 Temperature distribution
K1 Photonic band gap
K1 Metals
K1 HEMTs
K1 Stability analysis
K1 Threshold voltage
K1 Dielectrics
K1 high-temperature electronics
K1 Ga203 FET
K1 GaN HEMT
K1 gate leakage
K1 reliability
K1 transmission electron microscopy
SP 263
OP 268
LK http://dx.doi.org/https://doi.org/10.1109/NAECON58068.2023.10365790
DO https://doi.org/10.1109/NAECON58068.2023.10365790
SF ELIB - SuUB Bremen

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