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1 Ergebnisse
1
SiC-Based High-Temperature Gate Driver Integrated Circuit f..:
, In:
2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)
,
Kong, Moufu
;
Luo, Yingzhi
;
Yan, Ronghe
... - p. 195-199 , 2023
Link:
https://doi.org/10.1109/ICICM59499.2023.10365994
RT T1 <cTitle>2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)</cTitle>: T1 <Title>SiC-Based High-Temperature Gate Driver Integrated Circuit for SiC Power MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10365994&Exemplar=1&LAN=DE A1 Kong, Moufu A1 Luo, Yingzhi A1 Yan, Ronghe A1 Chang, Xinghong A1 Huang, Yinjun A1 Deng, Hongfei A1 Chen, Xinyang A1 Ai, Zhaoyu YR 2023 K1 Semiconductor device modeling K1 Performance evaluation K1 Micromechanical devices K1 MOSFET K1 Low voltage K1 Temperature K1 Silicon carbide K1 SiC MOSFET K1 SiC-based integrated circuit K1 SiC CMOS devices K1 BSIM model K1 high temperature SP 195 OP 199 LK http://dx.doi.org/https://doi.org/10.1109/ICICM59499.2023.10365994 DO https://doi.org/10.1109/ICICM59499.2023.10365994 SF ELIB - SuUB Bremen
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