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Impact of n+/p+-doped Polysilicon Gate in Lateral Overflow ..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Sato, Yoshihiro ; Kobayashi, Tsutomu ; Yamada, Takayoshi.. - p. 1-2 , 2023
Link: https://doi.org/10.1109/IMFEDK60983.2023.10366332