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1 Ergebnisse
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Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and..:
, In:
2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
,
Tapajna, Milan
;
Egyenes, Fridrich
;
Hrubisak, Fedor
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/IMFEDK60983.2023.10366336
RT T1
2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
: T1
Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties
UL https://suche.suub.uni-bremen.de/peid=ieee-10366336&Exemplar=1&LAN=DE A1 Tapajna, Milan A1 Egyenes, Fridrich A1 Hrubisak, Fedor A1 Husekova, Kristina A1 Dobrocka, Edmund A1 Nadazdy, Peter A1 Rosova, Alica A1 Chouhan, Hemendra A1 Keshtkar, Javad A1 Gucmann, Filip YR 2023 SN 2836-9947 K1 MOSFET K1 Silicon carbide K1 Photonic band gap K1 Films K1 Rectifiers K1 Lattices K1 Switches K1 Ga2O3 K1 Liquid-injection MOCVD K1 epitaxy K1 SiC substrate SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IMFEDK60983.2023.10366336 DO https://doi.org/10.1109/IMFEDK60983.2023.10366336 SF ELIB - SuUB Bremen
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