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1 Ergebnisse
1
High Linearity AlGaN/GaN/Graded AlGaN/GaN Double Channel HE..:
, In:
2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
,
Yu, Qian
;
Shi, Chunzhou
;
Yang, Ling
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/IMWS-AMP57814.2023.10381059
RT T1 <cTitle>2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)</cTitle>: T1 <Title>High Linearity AlGaN/GaN/Graded AlGaN/GaN Double Channel HEMTs for High/Low Voltage Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10381059&Exemplar=1&LAN=DE A1 Yu, Qian A1 Shi, Chunzhou A1 Yang, Ling A1 Zhang, Meng A1 Lu, Hao A1 Zou, Xu A1 Hou, Bin YR 2023 SN 2694-2992 K1 Radio frequency K1 Low voltage K1 Cutoff frequency K1 Linearity K1 High-voltage techniques K1 HEMTs K1 Wide band gap semiconductors K1 linearity K1 double channel K1 graded channel K1 low/high voltage SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/IMWS-AMP57814.2023.10381059 DO https://doi.org/10.1109/IMWS-AMP57814.2023.10381059 SF ELIB - SuUB Bremen
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