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1 Ergebnisse
1
Fabrication AlGaN/GaN Fin-HEMTs With Hexagon Nano-scale Fin..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Lu, Yu-Hsuan
;
Chang, Yu-Cheng
;
Lu, Wei-Ju
... - p. 1-3 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382164
RT T1 <cTitle>2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)</cTitle>: T1 <Title>Fabrication AlGaN/GaN Fin-HEMTs With Hexagon Nano-scale Fin Channel</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10382164&Exemplar=1&LAN=DE A1 Lu, Yu-Hsuan A1 Chang, Yu-Cheng A1 Lu, Wei-Ju A1 Lin, Feng-Ting A1 Xu, Bo-Hsun A1 Wu, Chao-Hsin YR 2023 SN 2687-8577 K1 Fabrication K1 Wet etching K1 Cutoff frequency K1 Surface roughness K1 Wide band gap semiconductors K1 Transistors K1 Current density K1 Fin-HEMTs K1 hexagon K1 cutoff frequency K1 maximum oscillation frequency SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382164 DO https://doi.org/10.1109/WiPDA58524.2023.10382164 SF ELIB - SuUB Bremen
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