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Comparison of the static characteristics of GaN HEMTs with ..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Geng, Xiaomeng
;
Wieczorek, Nick
;
Kuring, Carsten
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382193
RT T1
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
Comparison of the static characteristics of GaN HEMTs with different gate technologies and the impact on modeling
UL https://suche.suub.uni-bremen.de/peid=ieee-10382193&Exemplar=1&LAN=DE A1 Geng, Xiaomeng A1 Wieczorek, Nick A1 Kuring, Carsten A1 Hilt, Oliver A1 Wolf, Mihaela A1 Dieckerhoff, Sibylle YR 2023 SN 2687-8577 K1 Schottky barriers K1 Logic gates K1 HEMTs K1 Ohmic contacts K1 Transistors K1 Gallium nitride K1 MODFETs K1 Gallium Nitride (GaN) K1 Device characterisation K1 HEMT K1 p-GaN K1 Schottky-type SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382193 DO https://doi.org/10.1109/WiPDA58524.2023.10382193 SF ELIB - SuUB Bremen
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