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1 Ergebnisse
1
Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Mancini, Stephen A
;
Jang, Seung Yup
;
Chen, Zeyu
... - p. 1-6 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382208
RT T1 <cTitle>2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)</cTitle>: T1 <Title>Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10382208&Exemplar=1&LAN=DE A1 Mancini, Stephen A A1 Jang, Seung Yup A1 Chen, Zeyu A1 Kim, Dongyoung A1 Raghothamachar, Balaji A1 Dudley, Michael A1 Sung, Woongje YR 2023 SN 2687-8577 K1 Structural rings K1 MOSFET K1 Ion implantation K1 Aluminum K1 Implants K1 Surfaces K1 Leakage currents K1 4H-Silicon Carbide (SiC) K1 Forward Blocking K1 Leakage Current K1 Breakdown Voltage K1 Room Temperature Implantation K1 Edge Termination K1 Basal Plane Dislocations (BPDs) K1 X-Ray Topography SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382208 DO https://doi.org/10.1109/WiPDA58524.2023.10382208 SF ELIB - SuUB Bremen
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