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1 Ergebnisse
1
A Physical-Based 3rd-Quadrant Behavioral Model for Power Si..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Chen, Yuzhi
;
Li, Chi
;
Wu, Yifan
. - p. 1-6 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382219
RT T1
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
A Physical-Based 3rd-Quadrant Behavioral Model for Power SiC MOSFET
UL https://suche.suub.uni-bremen.de/peid=ieee-10382219&Exemplar=1&LAN=DE A1 Chen, Yuzhi A1 Li, Chi A1 Wu, Yifan A1 Zheng, Zedong YR 2023 SN 2687-8577 K1 Semiconductor device modeling K1 Couplings K1 Performance evaluation K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Threshold voltage K1 SiC MOSFET K1 third quadrant (3rd-quad) behavior K1 channel K1 body diode K1 body effect K1 physical coupling SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382219 DO https://doi.org/10.1109/WiPDA58524.2023.10382219 SF ELIB - SuUB Bremen
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