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1 Ergebnisse
1
Gate Lifetime of P-Gate GaN HEMT Under DC and Switching Ove..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Wang, Bixuan
;
Zhang, Ruizhe
;
Song, Qihao
.. - p. 1-5 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382229
RT T1
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
Gate Lifetime of P-Gate GaN HEMT Under DC and Switching Overvoltage Stress
UL https://suche.suub.uni-bremen.de/peid=ieee-10382229&Exemplar=1&LAN=DE A1 Wang, Bixuan A1 Zhang, Ruizhe A1 Song, Qihao A1 Li, Qiang A1 Zhang, Yuhao YR 2023 SN 2687-8577 K1 Resonant frequency K1 Switches K1 Voltage K1 Logic gates K1 HEMTs K1 Weibull distribution K1 MODFETs K1 power electronics K1 GaN HEMT K1 gate reliability K1 lifetime K1 DC K1 spike K1 ringing K1 inductive power switching SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382229 DO https://doi.org/10.1109/WiPDA58524.2023.10382229 SF ELIB - SuUB Bremen
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