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1 Ergebnisse
1
Planar Implantation Edge Termination for Vertical GaN Power..:
, In:
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
,
Wang, Yifan
;
Xiao, Ming
;
Porter, Matthew
... - p. 1-5 , 2023
Link:
https://doi.org/10.1109/WiPDA58524.2023.10382233
RT T1
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
: T1
Planar Implantation Edge Termination for Vertical GaN Power Devices
UL https://suche.suub.uni-bremen.de/peid=ieee-10382233&Exemplar=1&LAN=DE A1 Wang, Yifan A1 Xiao, Ming A1 Porter, Matthew A1 Zhang, Ruizhe A1 Song, Qihao A1 Lu, Albert A1 Yee, Nathan A1 Wong, Hiu Yung A1 Zhang, Yuhao YR 2023 SN 2687-8577 K1 Performance evaluation K1 Ion implantation K1 Switches K1 High-voltage techniques K1 Avalanche breakdown K1 Robustness K1 Semiconductor diodes K1 power electronics K1 power semiconductor devices K1 gallium nitride K1 edge termination K1 avalanche capability K1 ion implantation SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA58524.2023.10382233 DO https://doi.org/10.1109/WiPDA58524.2023.10382233 SF ELIB - SuUB Bremen
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