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1 Ergebnisse
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Static Noise Margin in 16 nm FinFET 6T and 8T SRAM Cells fo..:
, In:
2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
,
Stevenazzi, Lorenzo
;
Baschirotto, Andrea
;
Matteis, Marcello De
- p. 1-4 , 2023
Link:
https://doi.org/10.1109/ICECS58634.2023.10382712
RT T1
2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
: T1
Static Noise Margin in 16 nm FinFET 6T and 8T SRAM Cells for Compute-in-Memory
UL https://suche.suub.uni-bremen.de/peid=ieee-10382712&Exemplar=1&LAN=DE A1 Stevenazzi, Lorenzo A1 Baschirotto, Andrea A1 Matteis, Marcello De YR 2023 K1 Power demand K1 Memory management K1 Writing K1 Parallel processing K1 SRAM cells K1 FinFETs K1 Transistors K1 Integrated Circuits K1 Static Random Access Memory K1 Convolutional Neural Network K1 finFET K1 Compute-In-Memory SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICECS58634.2023.10382712 DO https://doi.org/10.1109/ICECS58634.2023.10382712 SF ELIB - SuUB Bremen
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